Controllable physicochemical properties of WO_x thin films grown under glancing angle

• Rupam Mandal,
• Aparajita Mandal,
• Alapan Dutta,
• Rengasamy Sivakumar,
• Sanjeev Kumar Srivastava and
• Tapobrata Som

Beilstein J. Nanotechnol. 2024, 15, 350–359, doi:10.3762/bjnano.15.31

• fascinating optical and electrical properties [1]. WOx is a wide-bandgap oxide semiconductor with a large excitonic binding energy of 0.15 eV and a high optical absorption coefficient (≥104 cm−1 in the UV region) [2]. These, in conjunction with decent carrier mobility (12 cm2·V−1·s−1), make this material an

Dual-heterodyne Kelvin probe force microscopy

• Benjamin Grévin,
• Fatima Husainy,
• Dmitry Aldakov and
• Cyril Aumaître

Beilstein J. Nanotechnol. 2023, 14, 1068–1084, doi:10.3762/bjnano.14.88

• processes of photogeneration and carrier annihilation (by electron–hole recombination). In addition, from the venture of time-resolved KPFM under pulsed illumination, the SPV dynamics are mainly governed by the effective carrier mobility and trapping mechanisms. The main factor limiting the photocharging

Metal-organic framework-based nanomaterials as opto-electrochemical sensors for the detection of antibiotics and hormones: A review

• Akeem Adeyemi Oladipo,
• Saba Derakhshan Oskouei and
• Mustafa Gazi

Beilstein J. Nanotechnol. 2023, 14, 631–673, doi:10.3762/bjnano.14.52

• might produce localization of donor states close to the aromatic ring, were suggested as the source of the bandgap modulation due to changes in the functionality of the organic linker [82]. Due to MOFs’ low resistivity and rapid charge carrier mobility, some researchers [80][81][82][83] have recently

Bismuth-based nanostructured photocatalysts for the remediation of antibiotics and organic dyes

• Akeem Adeyemi Oladipo and
• Faisal Suleiman Mustafa

Beilstein J. Nanotechnol. 2023, 14, 291–321, doi:10.3762/bjnano.14.26

• light absorption, weaker charge separation, and poor charge carrier mobility. Researchers are concentrating on several strategies, such as doping, heterojunction formation, induction of the surface plasmon resonance effect, and the formation of Z-schemes, Schottky junctions, and engineered composites

Efficient liquid exfoliation of KP₁₅ nanowires aided by Hansen's empirical theory

• Zhaoxuan Huang,
• Zhikang Jiang,
• Nan Tian,
• Disheng Yao,
• Fei Long,
• Yanhan Yang and
• Danmin Liu

Beilstein J. Nanotechnol. 2022, 13, 788–795, doi:10.3762/bjnano.13.69

• Abstract The KP15 nanowires with one-dimensional properties has a defect-free surface, high anisotropy, and carrier mobility which is desirable for the development of novel nanodevices. However, the preparation of nanoscale KP15 is still inefficient. In this work, the Hansen solubility parameters of KP15

• weak interaction between these chains [3][4]. Therefore, those 1D materials have defect-free surfaces, high anisotropy, and carrier mobility. For example, TiS3 nanowires obtained by mechanical stripping have a large carrier mobility of about 10000 cm2·V−1·s−1 [5][6][7]. Fibrous phosphorus is also a new

• one-dimensional material with high carrier mobility (308 cm2·V−1·s−1) and rapid response time [8][9][10]. These one-dimensional materials are ideal for photovoltaic and photocatalytic applications. The KP15 is considered to be a novel low-dimensional material with layered structure, high hole carrier

Electrostatic pull-in application in flexible devices: A review

• Teng Cai,
• Yuming Fang,
• Yingli Fang,
• Ruozhou Li,
• Ying Yu and
• Mingyang Huang

Beilstein J. Nanotechnol. 2022, 13, 390–403, doi:10.3762/bjnano.13.32

• the scale down of advanced IC designs. GR-NEM switches can be used as a new and unique ESD protection structure to replace PN junctions in integrated circuits. The high carrier mobility and the heat transfer coefficient allow for a low conduction resistance and can avoid device burn during ESD. ESD

Measurement of polarization effects in dual-phase ceria-based oxygen permeation membranes using Kelvin probe force microscopy

• Kerstin Neuhaus,
• Christina Schmidt,
• Liudmila Fischer,
• Wilhelm Albert Meulenberg,
• Ke Ran,
• Joachim Mayer and
• Stefan Baumann

Beilstein J. Nanotechnol. 2021, 12, 1380–1391, doi:10.3762/bjnano.12.102

• temperatures above 400 °C. However, the implications of local oxidation and reduction for charge carrier mobility at lower temperatures are by far less well studied. Therefore, a combined polarization-KPFM experiment was performed on a dual-phase material consisting of 60 vol % Ce0.8Sm0.2O1.9 and 40 vol

Assessment of the optical and electrical properties of light-emitting diodes containing carbon-based nanostructures and plasmonic nanoparticles: a review

• Keshav Nagpal,
• Erwan Rauwel,
• Frédérique Ducroquet and
• Protima Rauwel

Beilstein J. Nanotechnol. 2021, 12, 1078–1092, doi:10.3762/bjnano.12.80

• optimum quantity (0–0.1 wt %) for the luminance of the device [54]. They observed an approximate six-fold increase in the PL emission for 0.005 wt % of graphene nanosheets. The reason for the increased PL emission is attributed to the higher charge carrier mobility in graphene nanostructures, which

Nanoporous and nonporous conjugated donor–acceptor polymer semiconductors for photocatalytic hydrogen production

• Zhao-Qi Sheng,
• Yu-Qin Xing,
• Yan Chen,
• Guang Zhang,
• Shi-Yong Liu and
• Long Chen

Beilstein J. Nanotechnol. 2021, 12, 607–623, doi:10.3762/bjnano.12.50

• Conjugated polymers (CPs) as photocatalysts have evoked substantial interest. Their geometries and physical (e.g., chemical and thermal stability and solubility), optical (e.g., light absorption range), and electronic properties (e.g., charge carrier mobility, redox potential, and exciton binding energy) can

• tuning the bandgap, enlarging the surface area, enabling more efficient separation of electron–hole pairs, and enhancing the charge carrier mobility. In particular, donor–acceptor (D–A) polymers were demonstrated as a promising platform to develop high-performance photocatalysts due to their easily

• tunable bandgaps, high charge carrier mobility, and efficient intramolecular charge transfer. In this minireview, recent advances of D–A polymers in photocatalytic hydrogen evolution are summarized with a particular focus on modulating the optical and electronic properties of CPs by varying the acceptor

Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects

• Jakub Kierdaszuk,
• Piotr Kaźmierczak,
• Justyna Grzonka,
• Aleksandra Krajewska,
• Aleksandra Przewłoka,
• Wawrzyniec Kaszub,
• Zbigniew R. Zytkiewicz,
• Marta Sobanska,
• Maria Kamińska,
• Andrzej Wysmołek and
• Aneta Drabińska

Beilstein J. Nanotechnol. 2021, 12, 566–577, doi:10.3762/bjnano.12.47

• , carrier mobility. The 2D band energy and FWHM also depend on carrier concentration. However, their changes are significantly lower than those found for the G band FWHM, which will be discussed in the next paragraph [43]. The analysis of graphene G band parameters allows for one to trace how NW substrate

• carrier mobility in N0 and N100 samples (Figure 3b, Figure 3f). The intensity ratio of 2D and G graphene bands in monolayer graphene has been reported to be negatively correlated with carrier concentration [15]. A higher Fermi energy increases the probability of scattering on free carriers, which adds to

• , such as strain induced by mechanical contact between materials or gating of graphene by neighbouring layers, are important for further applications. Furthermore, electron scattering on defects modifies graphene properties in several ways, for example, additional scattering centres reduce carrier

Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor

• Jianqi Dong,
• Liang Chen,
• Yuqing Yang and
• Xingfu Wang

Beilstein J. Nanotechnol. 2020, 11, 1847–1853, doi:10.3762/bjnano.11.166

• introduced during the epitaxial growth process [1][2][3]. Furthermore, the analysis of the internal polarization of the AlGaN/AlN/GaN heterojunction showed the existence of a 2D electron gas (2DEG), which effectively suppresses the degradation of the carrier mobility caused by the scattering at charge

Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS₂ field-effect transistors

• Jakub Jadwiszczak,
• Pierce Maguire,
• Conor P. Cullen,
• Georg S. Duesberg and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2020, 11, 1329–1335, doi:10.3762/bjnano.11.117

• Technology, Universität der Bundeswehr München, Werner-Heisenberg-Weg 39, 85577 Neubiberg, Germany 10.3762/bjnano.11.117 Abstract Helium ion irradiation is a known method of tuning the electrical conductivity and charge carrier mobility of novel two-dimensional semiconductors. Here, we report a systematic

• improvement of both the carrier mobility in the transistor channel and the electrical conductance of the MoS2, due to doping with ion beam-created sulfur vacancies. Larger areal irradiations introduce a higher concentration of scattering centers, hampering the electrical performance of the device. In addition

• negative gate biases [20][21]. These complex states may also improve the carrier mobility across a given gate bias range by forming stable impurity bands near the conduction band [22]. Some theoretical studies suggest, however, that individual SVs ought to act as electron acceptors in MoS2 [23][24]. As the

Nonadiabatic superconductivity in a Li-intercalated hexagonal boron nitride bilayer

• Kamila A. Szewczyk,
• Izabela A. Domagalska,
• Artur P. Durajski and
• Radosław Szczęśniak

Beilstein J. Nanotechnol. 2020, 11, 1178–1189, doi:10.3762/bjnano.11.102

• ][17][18][19], Ru [20][21], Pt [22][23], SiC [24][25][26], and SiO2 [27][28][29]. Unfortunately, the obtained experimental data showed that the incompatible crystalline structure of the above materials leads to significant suppression of the carrier mobility of graphene [13][30]. It is now assumed that

Structural optical and electrical properties of a transparent conductive ITO/Al–Ag/ITO multilayer contact

• Aliyu Kabiru Isiyaku,
• Ahmad Hadi Ali and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2020, 11, 695–702, doi:10.3762/bjnano.11.57

• roughness is attributed to the increasing grain sizes [35]. The large grain sizes of IAAI films reduce the number of grain boundaries and thus the scattering at grain boundaries. This improves the carrier mobility leading to an increased electrical conductivity of the films. The surface morphology of the

• . Likewise, the carrier mobility increased significantly from ca. 22.5 cm2 V−1 s−1 to ca. 30.2 cm2 V−1 s−1. Similar findings were reported by Meshram et al. [4], Kumar et al. [9] and Ali et al. [34]. The increased carrier concentration is attributed to grain growth and decreased scattering. The quality of

• determined at room temperature with a four-point probe taking into account the measured film thickness and a supply current of 4 mA. The results obtained are the average of repeated measurements. Hall effect measurements analyses Further studies on electrical properties in terms of carrier mobility and

Implementation of data-cube pump–probe KPFM on organic solar cells

• Benjamin Grévin,
• Olivier Bardagot and
• Renaud Demadrille

Beilstein J. Nanotechnol. 2020, 11, 323–337, doi:10.3762/bjnano.11.24

• optical power. At the lowest fluence applied (Popt = 2.4 mW∙cm−2), the photocharging time even exceeds the pulse duration within the second sequence (Figure 6f). The physics of the photocharging dynamics are based on a drift-diffusion process limited by the carrier mobility. Hence, our data (Figure 6

• ) indicate that the effective carrier mobility strongly depends on the photocarrier concentration, which is inversely proportional to the optical power. Such a situation has been reported for different organic blends [33][34][35]. In some models, traps are the source of this concentration-dependent mobility

• global electrostatic landscape probed by KPFM in the dark state [20]. The photocharging dynamics can be understood as follows. After exciton splitting and dissociation of the charge transfer states at the D–A interfaces, the photogenerated carriers experience a drift-diffusion limited by the carrier

Recent progress in perovskite solar cells: the perovskite layer

• Xianfeng Dai,
• Ke Xu and
• Fanan Wei

Beilstein J. Nanotechnol. 2020, 11, 51–60, doi:10.3762/bjnano.11.5

• perovskites is lower than that of their 3D counterparts because of the lower carrier mobility, the wide optical bandgap, the low conductivity and the large exciton binding energy. Therefore, Priya et al. [8] created a methylammonium (MA)-based 2D perovskite film by using the vapor-fumigation technique. The

Mobility of charge carriers in self-assembled monolayers

• Zhihua Fu,
• Tatjana Ladnorg,
• Hartmut Gliemann,
• Alexander Welle,
• Asif Bashir,
• Michael Rohwerder,
• Qiang Zhang,
• Björn Schüpbach,
• Andreas Terfort and
• Christof Wöll

Beilstein J. Nanotechnol. 2019, 10, 2449–2458, doi:10.3762/bjnano.10.235

• a top electrode. We were able to determine a relationship between island size and electrical conductivity, and from this dependence, we could obtain information on the lateral charge transport and charge carrier mobility within the thin OSC layers. Our study demonstrates that AFM nanografting of

• ]. Domain boundaries, contaminations and defects have a pronounced, negative effect on charge carrier mobility. This fact calls for measurements on low-defect density samples, preferentially macroscopic single crystals, to determine the intrinsic mobilities. This approach, however, is difficult due to the

• demonstrated that the molecular packing of the monomers within the SAM is beneficial to the intermolecular electronic coupling and further promote charge carrier mobility. In accordance with the simulation, the experimental analysis of the apparent height of the islands as a function of island diameter in the

Nontoxic pyrite iron sulfide nanocrystals as second electron acceptor in PTB7:PC₇₁BM-based organic photovoltaic cells

• Olivia Amargós-Reyes,
• José-Luis Maldonado,
• Omar Martínez-Alvarez,
• María-Elena Nicho,
• José Santos-Cruz,
• Juan Nicasio-Collazo,
• Irving Caballero-Quintana and
• Concepción Arenas-Arrocena

Beilstein J. Nanotechnol. 2019, 10, 2238–2250, doi:10.3762/bjnano.10.216

• ][8], a high optical absorption coefficient (2 × 105 cm−1) [4], high carrier mobility (2 to 80 cm2/Vs) [4][9] and a large charge carrier lifetime (200 ps) [10]. Therefore, FeS2 nanoparticles (NPs) can be a good alternative for PV applications [11]. Nanostructures of FeS2 have been used as counter

Improvement of the thermoelectric properties of a MoO₃ monolayer through oxygen vacancies

• Wenwen Zheng,
• Wei Cao,
• Ziyu Wang,
• Huixiong Deng,
• Jing Shi and
• Rui Xiong

Beilstein J. Nanotechnol. 2019, 10, 2031–2038, doi:10.3762/bjnano.10.199

• materials show a better thermoelectric performance than bulk materials [14]. Few-layer MoO3 nanosheets have already been experimentally synthesized by exfoliation similar to graphene [12][13][15][16]. Theoretical research has proved that few-layer MoO3 possesses a markedly high carrier mobility above 3000

• of the relaxation time τ, we apply the deformation potential (DP) theory [25] where τ is estimated by τ = μm*/e. The carrier mobility μ2D in 2D materials is given by Where m* is the effective mass and md is the density of states (DOS) mass determined by E1 is the DP constant and C2D is the elastic

• modulus. All parameters corresponding to the carrier mobility and the effective mass are taken from [17] and summarized in Table 1. As for phononic transport properties, we calculate the thermal conductivity of the lattice using the Boltzmann transport theory as implemented in the Quantum ESPRESSO (QE

Review of advanced sensor devices employing nanoarchitectonics concepts

• Katsuhiko Ariga,
• Tatsuyuki Makita,
• Masato Ito,
• Taizo Mori,
• Shun Watanabe and
• Jun Takeya

Beilstein J. Nanotechnol. 2019, 10, 2014–2030, doi:10.3762/bjnano.10.198

• . Ultrathin film nanoarchitectures are crucial not only for the facile contact between analytes and the sensor device but also with respect to the carrier mobility for semiconductor-based sensor devices. The enhancement of sensor performance on ultrathin films has been recognized in several recent research

Remarkable electronic and optical anisotropy of layered 1T’-WTe₂ 2D materials

• Qiankun Zhang,
• Rongjie Zhang,
• Jiancui Chen,
• Wanfu Shen,
• Chunhua An,
• Xiaodong Hu,
• Mingli Dong,
• Jing Liu and
• Lianqing Zhu

Beilstein J. Nanotechnol. 2019, 10, 1745–1753, doi:10.3762/bjnano.10.170

• anisotropic acoustic phonon scatter and elliptic elastic constants (both are relevant to the anisotropic crystalline structure) [31]. One of the consequences of an anisotropic carrier mobility is the anisotropic resistance. Therefore, we also performed angle-resolved DC conductance measurements on the 1T

Electronic and magnetic properties of doped black phosphorene with concentration dependence

• Ke Wang,
• Hai Wang,
• Min Zhang,
• Yan Liu and
• Wei Zhao

Beilstein J. Nanotechnol. 2019, 10, 993–1001, doi:10.3762/bjnano.10.100

• graphene has led to extensive research efforts on two-dimensional (2D) materials. Although graphene exhibits large carrier mobility and intriguing mechanical properties, its zero bandgap impedes its application in spintronic devices [1][2]. Subsequently, 2D transition-metal dichalcogenides (TMDs) have

• received enormous attention [3][4]. While the electronic properties of TMDs range from metallic (such as NbS2) [5] to semiconducting (such as WS2) [6], the low carrier mobility limits the application of these materials. Recently, black phosphorene has attracted research interest owing to its direct bandgap

• and high carrier mobility [7][8]. Unlike zero-band-gap graphene, the layer-dependent bandgap of black phosphorene ranges from 0.31 to 1.9 eV [9]. The hole-dominated mobility of phosphorene is up to 1000 cm2·V−1·s−1 theoretically [10], which is much higher than that of TMDs. These properties render

Nanocomposite–parylene C thin films with high dielectric constant and low losses for future organic electronic devices

• Marwa Mokni,
• Gianluigi Maggioni,
• Abdelkader Kahouli,
• Sara M. Carturan,
• Walter Raniero and
• Alain Sylvestre

Beilstein J. Nanotechnol. 2019, 10, 428–441, doi:10.3762/bjnano.10.42

• gate dielectric, which is a crucial requirement for the performance of the OFETs and for the device reliability. Charge-carrier mobility is improved in the presence of this polymer [17]. PPXC is also an appropriate hydroxyl-free gate dielectric and prevents trapping of electrons at the semiconductor

Effects of post-lithography cleaning on the yield and performance of CVD graphene-based devices

• Eduardo Nery Duarte de Araujo,
• Thiago Alonso Stephan Lacerda de Sousa,
• Luciano de Moura Guimarães and
• Flavio Plentz

Beilstein J. Nanotechnol. 2019, 10, 349–355, doi:10.3762/bjnano.10.34

• applied in standard lithography processes and that, inevitably, modify the electrical proprieties of graphene. By Raman spectroscopy and electrical-transport investigations, we correlate the room-temperature carrier mobility of graphene devices with the size of well-ordered domains in graphene. In

• properties are deteriorated as compared with devices fabricated by conventional production methods. Keywords: CVD graphene; defects; mobility; well-ordered domain; Introduction The unique properties of graphene, such as high conductivity, high carrier mobility at room temperature, high sensitivity of the

• performed Raman spectroscopy and electrical transport measurements, at room temperature, to correlate the size of well-ordered domains in graphene with its carrier mobility. The Raman spectroscopy was performed using an InVia Renishaw Raman spectrometer with a 514.5 nm laser and the electrical transport

Uniform Sb₂S₃ optical coatings by chemical spray method

• Jako S. Eensalu,
• Atanas Katerski,
• Erki Kärber,
• Ilona Oja Acik,
• Arvo Mere and
• Malle Krunks

Beilstein J. Nanotechnol. 2019, 10, 198–210, doi:10.3762/bjnano.10.18

• conversion efficiency of all solar absorber materials because decreasing the amount of grain boundaries likely increases charge carrier mobility [26]. The crystallite sizes of as-deposited and thermally treated Sb2S3 layers are presented in Table 2. The effect of the deposition temperature is observed in Sb